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Transistor
2SC5019
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
Unit: mm
4.50.1 1.60.2 1.50.1
4.0+0.25 -0.20
q q q q
45
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25C)
Ratings 15 10 2 80 1 150 -55 ~ +150 Unit V V V mA W C C
3.00.15
Symbol VCBO VCEO VEBO IC PC* Tj Tstg
1:Base 2:Collector 3:Emitter
MiniP3-F1 Package
Marking symbol : 1W
Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure
(Ta=25C)
Symbol ICBO IEBO VCBO VCEO hFE fT Cob | S21e NF |2 GUM Conditions VCB = 10V, IE = 0 VEB = 2V, IC = 0 IC = 10A, IE = 0 IC = 100A, IB = 0 VCE = 8V, IC = 20mA VCE = 8V, IC = 20mA, f = 800MHz VCB = 10V, IE = 0, f = 1MHz VCE = 8V, IC = 20mA, f = 800MHz VCE = 8V, IC = 20mA, f = 800MHz VCE = 8V, IC = 20mA, f = 800MHz 7.5 15 10 80 5 6 0.9 10 11.5 1.7 1.2 250 GHz pF dB dB dB min typ max 1 1 Unit A A V V
Publication date: August 2002
SJC00174BED
0.4 max.
Low noise figure NF. High gain. High transition frequency fT. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
2.50.1 3
0.40.04
s Features
0.40.08 1.50.1 3
2.60.1
1.0+0.1 -0.2
1
3 2 0.50.08
1
2SC5019
PC -- Ta
1.4
IC -- VCE
24 Ta=25C 20 IB=200A 100 120
IC -- VBE
VCE=8V
Collector power dissipation PC (W)
1.2
Collector current IC (mA)
Collector current IC (mA)
Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion.
180A 160A 16 140A 120A 12 100A 80A 60A 4 40A 20A
25C Ta=75C 80 -25C
1.0
0.8
60
0.6
8
40
0.4
0.2
20
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 IC/IB=10 600
hFE -- IC
12 VCE=8V
fT -- IC
VCE=8V f=800MHz Ta=25C
Forward current transfer ratio hFE
500
Transition frequency fT (GHz)
10 30 100
10
400 Ta=75C 300 25C 200 -25C 100
8
Ta=75C 25C -25C
6
4
2
0.3
1
3
10
30
100
0 0.1
0.3
1
3
0 0.1
0.3
1
3
10
30
100
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
Collector output capacitance Cob (pF)
IE=0 f=1MHz Ta=25C
GUM -- IC
Maximum unilateral power gain GUM (dB)
24 VCE=8V f=800MHz Ta=25C 12
NF -- IC
VCE=8V (Rg=50) f=800MHz Ta=25C
2.4
2.0
20
10
1.6
16
Noise figure NF (dB)
0.3 1 3 10 30 100
8
1.2
12
6
0.8
8
4
0.4
4
2
0 0.1
0.3
1
3
10
30
100
0 0.1
0 0.1
0.3
1
3
10
30
100
Collector to base voltage VCB (V)
Collector current IC (mA)
Collector current IC (mA)
2
SJC00174BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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